Low-frequency noise degradation caused by STI interface...

IEEE Electron Device Letters 2001 / 09 Vol. 22; Iss. 9

Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Hyeokjae Lee,, Jong-Ho Lee,, Hyungsoon Shin,, Young June Park,, Hong Shick Min,
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Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.944336
Date:
September, 2001
File:
PDF, 74 KB
english, 2001
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