A new empirical nonlinear model for sub-250 nm channel...

A new empirical nonlinear model for sub-250 nm channel MOSFET

Siligaris, A., Dambrine, G., Schreurs, D., Danneville, F.
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Volume:
13
Language:
english
Journal:
IEEE Microwave and Wireless Components Letters
DOI:
10.1109/lmwc.2003.815687
Date:
October, 2003
File:
PDF, 317 KB
english, 2003
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