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[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - FDSOI CMOS with dielectrically-isolated back gates and 30nm LG high-γ/metal gate
Khater, M., Cai, J., Dennard, R. H., Yau, J., Wang, C., Shi, L., Guillorn, M., Ott, J., Ouyang, Q., Haensch, W.Year:
2010
Language:
english
DOI:
10.1109/vlsit.2010.5556125
File:
PDF, 784 KB
english, 2010