[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - A high-performance 0.1 μm CMOS with elevated salicide using novel Si-SEG process
Wakabayashi, H., Yamamoto, T., Tatsumi, T., Tokunaga, K., Tamura, T., Mogami, T., Kunio, T.Year:
1997
Language:
english
DOI:
10.1109/iedm.1997.649473
File:
PDF, 530 KB
english, 1997