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Ion-implantation damage and annealing effects in (InGa)AsGaAs strained-layer semiconductor systems
D.R. Myers, L.R. Dawson, R.M. Biefeld, G.W. Arnold, C.R. Hills, B.L. DoyleVolume:
4
Year:
1988
Language:
english
Pages:
5
DOI:
10.1016/0749-6036(88)90243-1
File:
PDF, 490 KB
english, 1988