GaAsAlGaAs resonant tunneling diodes: The dependence of the...

GaAsAlGaAs resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height

Jan Söderström, Thorwald G. Andersson
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Volume:
5
Year:
1989
Language:
english
Pages:
5
DOI:
10.1016/0749-6036(89)90077-3
File:
PDF, 389 KB
english, 1989
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