[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Hot carrier reliability for 0.13 μm CMOS technology with dual gate oxide thickness
Lin, C., Biesemans, S., Han, L.K., Houlihan, K., Schiml, T., Schruefer, K., Wann, C., Chen, J., Mahnkopf, R.Year:
2000
Language:
english
DOI:
10.1109/iedm.2000.904276
File:
PDF, 313 KB
english, 2000