Half-MOS Based Single-Poly EEPROM Cell With Program and...

IEEE Electron Device Letters 2013 / 12 Vol. 34; Iss. 12

Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity

Torricelli, Fabrizio, Milani, Luca, Colalongo, Luigi, Richelli, Anna, Kovacs-Vajna, Zsolt Miklos
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2285258
Date:
December, 2013
File:
PDF, 808 KB
english, 2013
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