Flash EEPROM Threshold Instabilities due to Charge Trapping During Program/Erase Cycling
Mielke, N., Belgal, H., Kalastirsky, I., Kalavade, P., Kurtz, A., Meng, Q., Righos, N., Wu, J.Volume:
4
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2004.836721
Date:
September, 2004
File:
PDF, 653 KB
english, 2004