Characteristics of RF reactive sputter-deposited...

Materials Science in Semiconductor Processing 2015 / 02 Vol. 30

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Anh Tuan, Thi Tran, Kuo, Dong-Hau
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Volume:
30
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2014.10.021
Date:
February, 2015
File:
PDF, 1.97 MB
english, 2015
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