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Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes
Anh Tuan, Thi Tran, Kuo, Dong-HauVolume:
30
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2014.10.021
Date:
February, 2015
File:
PDF, 1.97 MB
english, 2015