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[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - A Si/SiGe heterojunction bipolar transistor with undoped SiGe spacer for CRYO-BiCMOS circuits
Yamazaki, T., Imai, K., Tashiro, T., Tatsumi, T., Niino, T., Nakamae, M.Year:
1990
Language:
english
DOI:
10.1109/iedm.1990.237152
File:
PDF, 255 KB
english, 1990