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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Record low contact resistivity to n-type Ge for CMOS and memory applications
Martens, K., Firrincieli, A., Rooyackers, R., Vincent, B., Loo, R., Locorotondo, S., Rosseel, E., Vandeweyer, T., Hellings, G., De Jaeger, B., Meuris, M., Favia, P., Bender, H., Douhard, B., Delmotte,Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703387
File:
PDF, 602 KB
english, 2010