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[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Breakdown voltage enhancement of AlGaN/GaN high electmn mobility transiston using annealing technique
Jaesun Lee,, Dongwin Liu,, Wu Lu,Year:
2003
Language:
english
DOI:
10.1109/isdrs.2003.1272020
File:
PDF, 86 KB
english, 2003