A mechanism for induced surface degradation of...

A mechanism for induced surface degradation of high-resistive GaAs during device fabrication

Rastogi, A. C., Teh, C. K., Weichman, F. L.
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Volume:
63
Language:
english
Journal:
Canadian Journal of Physics
DOI:
10.1139/p85-118
Date:
June, 1985
File:
PDF, 582 KB
english, 1985
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