![](/img/cover-not-exists.png)
A mechanism for induced surface degradation of high-resistive GaAs during device fabrication
Rastogi, A. C., Teh, C. K., Weichman, F. L.Volume:
63
Language:
english
Journal:
Canadian Journal of Physics
DOI:
10.1139/p85-118
Date:
June, 1985
File:
PDF, 582 KB
english, 1985