Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm...

IEEE Transactions on Electron Devices 2013 / 08 Vol. 60; Iss. 8

Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Kim, Sanghyeon, Yokoyama, Masafumi, Taoka, Noriyuki, Nakane, Ryosho, Yasuda, Tetsuji, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2270558
Date:
August, 2013
File:
PDF, 1.55 MB
english, 2013
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