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[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Germanium profile, graduality and base doping level influences in the performance of SiGe HBT
Garcia, Eloy Ramirez, Zerounian, Nicolas, Aniel, Frederic, Enciso Aguilar, Mauro A., Barbalat, Benoit, Chevalier, Pascal, Chantre, AlainYear:
2007
Language:
english
DOI:
10.1109/isdrs.2007.4422469
File:
PDF, 182 KB
english, 2007