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Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs
Mahatme, N. N., Zhang, E. X., Reed, R. A., Bhuva, B. L., Schrimpf, R. D., Fleetwood, D. M., Linten, D., Simoen, E., Griffoni, A., Aoulaiche, M., Jurczak, M., Groeseneken, G.Volume:
59
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2012.2223828
Date:
December, 2012
File:
PDF, 1.06 MB
english, 2012