Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
Antoniadis, D. A., Aberg, I., Ni Chleirigh, C., Nayfeh, O. M., Khakifirooz, A., Hoyt, J. L.Volume:
50
Language:
english
Journal:
IBM Journal of Research and Development
DOI:
10.1147/rd.504.0363
Date:
July, 2006
File:
PDF, 676 KB
english, 2006