Charge-enhancement mechanisms of GaAs field-effect...

IEEE Transactions on Nuclear Science 1998 / 6 Vol. 45; Iss. 3

Charge-enhancement mechanisms of GaAs field-effect transistors: Experiment and simulation

McMorrow, D., Melinger, J.S., Knudson, A.R., Buchner, S., Lan Huu Tran,, Campbell, A.B., Curtice, W.R.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
45
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.685229
Date:
June, 1998
File:
PDF, 893 KB
english, 1998
Conversion to is in progress
Conversion to is failed