[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS 2011) - College Park, MD (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz
Sensale-Rodriguez, B., Jia Guo,, Ronghua Wang,, Guowang Li,, Tian Fang,, Saunier, P., Ketterson, A., Schuette, M., Xiang Gao,, Shiping Guo,, Yu Cao,, Laboutin, O., Johnson, W., Snider, G., Fay,Year:
2011
Language:
english
DOI:
10.1109/isdrs.2011.6135164
File:
PDF, 553 KB
english, 2011