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[IEEE IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - Munich, Germany (31 March-1 April 2003)] Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI - Electrical properties of MOCVD HfO/sub 2/ dielectric layers with polysilicon gate electrodes for CMOS applications
Date, L., Rittersma, Z.M., Massoubre, D., Ponomarev, Y., Roozeboom, F., Pique, D., van-Autryve, L., Van Elshocht, S., Caymax, M.Year:
2003
Language:
english
DOI:
10.1109/asmc.2003.1194482
File:
PDF, 352 KB
english, 2003