ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE...

Canadian Journal of Physics 1967 / 12 Vol. 45; Iss. 12

ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

Davies, J. A., Denhartog, J., Eriksson, L., Mayer, J. W.
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Volume:
45
Language:
english
Journal:
Canadian Journal of Physics
DOI:
10.1139/p67-339
Date:
December, 1967
File:
PDF, 806 KB
english, 1967
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