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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs
Baker, F.K., Pfiester, J.R., Mele, T.C., Tseng, H.-H., Tobin, P.J., Hayden, J.D., Gunderson, C.D., Parrillo, L.C.Year:
1989
Language:
english
DOI:
10.1109/iedm.1989.74317
File:
PDF, 373 KB
english, 1989