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[IEEE 2006 International Symposium on VLSI Technology, Systems, and Applications - Hsinchu, Taiwan (2006.4.24-2006.4.24)] 2006 International Symposium on VLSI Technology, Systems, and Applications - Electron Trapping Processes in High-¿ Gate Dielectrics and Nature of Traps
Bersuker, G., Gavartin, J., Sim, J., Park, C., Young, C., Nadkarni, S., Choi, R., Shluger, A., Lee, B.Year:
2006
Language:
english
DOI:
10.1109/vtsa.2006.251087
File:
PDF, 2.49 MB
english, 2006