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[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range

Darmo, J., Schaffer, F., Forster, A., Kordos, P.
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Year:
2000
Language:
english
DOI:
10.1109/asdam.2000.889470
File:
PDF, 284 KB
english, 2000
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