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[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and ar environment
Minami, Kaichiro, Moriya, Atsushi, Yuasa, Kazuhiro, Maeda, Kiyohiko, Yamada, Masayuki, Kunii, Yasuo, Niwano, Michio, Murota, JunichiYear:
2014
DOI:
10.1109/istdm.2014.6874672
File:
PDF, 259 KB
2014