Physical-Based Threshold Voltage and Mobility Models...

IEEE Transactions on Nanotechnology 2011 / 07 Vol. 10; Iss. 4

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on nMOSFETs

Wu, Wei, Du, Gang, Liu, Xiaoyan, Sun, Lei, Kang, Jinfeng, Han, Ruqi
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Volume:
10
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/tnano.2010.2089468
Date:
July, 2011
File:
PDF, 416 KB
english, 2011
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