Comprehensive Chemistry Designs in Porous SiOCH Film Stacks...

IEEE Transactions on Semiconductor Manufacturing 2008 / 08 Vol. 21; Iss. 3

Comprehensive Chemistry Designs in Porous SiOCH Film Stacks and Plasma Etching Gases for Damageless Cu Interconnects in Advanced ULSI Devices

Hayashi, Y., Ohtake, H., Kawahara, J., Tada, M., Saito, S., Inoue, N., Ito, F., Tagami, M., Ueki, M., Furutake, N., Takeuchi, T., Yamamoto, H., Abe, M.
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Volume:
21
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/tsm.2008.2001225
Date:
August, 2008
File:
PDF, 2.39 MB
english, 2008
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