Hot-carrier induced degradations on RF power...

IEEE Transactions on Device and Materials Reliability 2005 / 06 Vol. 5; Iss. 2

Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors

Sheng-Yi Huang,, Kun-Ming Chen,, Guo-Wei Huang,, Victor Liang,, Hua-Chou Tseng,, Hsu, T.-L., Chun-Yen Chang,
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Volume:
5
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2005.846829
Date:
June, 2005
File:
PDF, 584 KB
english, 2005
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