[IEEE 1994 VLSI Technology Symposium - Honolulu, HI, USA (7-9 June 1994)] Proceedings of 1994 VLSI Technology Symposium - 0.1 μm delta-doped MOSFET using post low-energy implanting selective epitaxy
Noda, K., Uchida, T., Tatsumi, T., Aoyama, T., Nakajima, K., Miyamoto, H., Hashimoto, T., Sasaki, I.Year:
1994
Language:
english
DOI:
10.1109/vlsit.1994.324398
File:
PDF, 234 KB
english, 1994