Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET Performance
Damrongplasit, Nattapol, Kim, Sung Hwan, Shin, Changhwan, Liu, Tsu-Jae KingVolume:
12
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/tnano.2013.2278153
Date:
November, 2013
File:
PDF, 647 KB
english, 2013