![](/img/cover-not-exists.png)
[IEEE 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (2006.7.3-2006.7.3)] 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
Balakumar, S., Wei, T., Tung, C.h., Lo, G.q, Nguyen, H., Fong, C., Agarwal, A., Kumar, R., Balasubramanian, N., Lee, S, Kwong, D.l.Year:
2006
Language:
english
DOI:
10.1109/ipfa.2006.251050
File:
PDF, 3.09 MB
english, 2006