[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Intrinsic correlation between mobility reduction and Vt shift due to interface dipole modulation in HfSiON/SiO2 stack by La or Al addition
Kosuke Tatsumura,, Takamitsu Ishihara,, Seiji Inumiya,, Kazuaki Nakajima,, Akio Kaneko,, Masakazu Goto,, Shigeru Kawanaka,, Atsuhiro Kinoshita,Year:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796604
File:
PDF, 392 KB
english, 2008