Proton radiation effects in 4H-SiC diodes and MOS...

IEEE Transactions on Nuclear Science 2004 / 12 Vol. 51; Iss. 6

Proton radiation effects in 4H-SiC diodes and MOS capacitors

Zhiyun Luo,, Tianbing Chen,, Ahyi, A.C., Sutton, A.K., Haugerud, B.M., Cressler, J.D., Sheridan, D.C., Williams, J.R., Marshall, P.W., Reed, R.A.
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Volume:
51
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2004.839254
Date:
December, 2004
File:
PDF, 271 KB
english, 2004
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