The role of border traps in MOS high-temperature...

IEEE Transactions on Nuclear Science 1993 / Dec. Vol. 40; Iss. 6

The role of border traps in MOS high-temperature postirradiation annealing response

Fleetwood, D.M., Shaneyfelt, M.R., Riewe, L.C., Winokur, P.S., Reber, R.A.
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Volume:
40
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.273535
Date:
January, 1993
File:
PDF, 1.20 MB
english, 1993
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