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[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks
Southwick, Richard G., Reed, J., Buu, C., Bui, H., Butler, R., Bersuker, G., Knowlton, W.B.Year:
2008
Language:
english
DOI:
10.1109/irws.2008.4796130
File:
PDF, 5.80 MB
english, 2008