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[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement
Llido, R., Sarafianos, A., Gagliano, O., Serradeil, V., Goubier, V., Lisart, M., Haller, G., Pouget, V., Lewis, D., Dutertre, J. M., Tria, A.Year:
2012
Language:
english
DOI:
10.1109/ipfa.2012.6306298
File:
PDF, 616 KB
english, 2012