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Studies on the Influences of i -GaN, n -GaN, p -GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors
Arulkumaran, Subramaniam, Egawa, Takashi, Ishikawa, HiroyasuVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2953
Date:
May, 2005
File:
PDF, 356 KB
english, 2005