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Mechanism of large area dislocation defect reduction in GaN layers on AlN∕Si (111) by substrate engineering
Jamil, M., Grandusky, J. R., Jindal, V., Tripathi, N., Shahedipour-Sandvik, F.Volume:
102
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2753706
File:
PDF, 660 KB
english, 2007