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Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In[sub x]Ga[sub 1−x]N/GaN multiple quantum wells
Chichibu, SF., Onuma, T., Sota, T., DenBaars, S. P., Nakamura, S., Kitamura, T., Ishida, Y., Okumura, H.Volume:
93
Year:
2003
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1535746
File:
PDF, 463 KB
english, 2003