Selective area growth of GaN on r-plane sapphire by MOCVD
Rozhavskaya, Mariya M., Lundin, Wsevolod V., Nikolaev, Andrey E., Zavarin, Evgeniy E., Troshkov, Sergey I., Brunkov, Pavel N., Tsatsulnikov, Andrey F.Volume:
10
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200545
Date:
March, 2013
File:
PDF, 295 KB
english, 2013