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Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces: Effects on valence-band discontinuity measurements
List, R. S.Volume:
6
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.575359
Date:
May, 1988
File:
PDF, 753 KB
english, 1988