SEU sensitive depth in a submicron SRAM technology

IEEE Transactions on Nuclear Science 1998 / 6 Vol. 45; Iss. 3

SEU sensitive depth in a submicron SRAM technology

Detcheverry, C., Ecoffet, R., Duzellier, S., Lorfevre, E., Bruguier, G., Barak, J., Lifshitz, Y., Palau, J.M., Casiot, J.
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Volume:
45
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.685248
Date:
June, 1998
File:
PDF, 531 KB
english, 1998
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