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Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al[sub 2]O[sub 3] (0001) substrates
S. Mikroulis, A. Georgakilas, A. Kostopoulos, V. Cimalla, E. Dimakis, P. KomninouYear:
2002
Language:
english
DOI:
10.1063/1.1472481
File:
PDF, 477 KB
english, 2002