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Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, G. Simin, X. Hu, J. YangYear:
2000
Language:
english
DOI:
10.1063/1.1321790
File:
PDF, 307 KB
english, 2000