Etching mechanisms of Si and SiO[sub 2] in inductively...

Etching mechanisms of Si and SiO[sub 2] in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Gaboriau, F., Fernandez-Peignon, M-C., Cartry, G., Cardinaud, Ch.
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Volume:
23
Year:
2005
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.1851541
File:
PDF, 407 KB
english, 2005
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