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[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Resistive switching characteristics of metal oxide for nonvolatile memory applications
Dong, R., Hasan, M., Choi, H. J., Lee, D. S., Pyun, M. B., Seong, D. J., Hwang, HyunsangYear:
2008
Language:
english
DOI:
10.1109/icsict.2008.4734691
File:
PDF, 3.33 MB
english, 2008