Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors
Stockman, S. A., Fresina, M. T., Hartmann, Q. J., Hanson, A. W., Gardner, N. F., Baker, J. E., Stillman, G. E.Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.356011
File:
PDF, 686 KB
english, 1994