Modified postannealing of the Ge condensation process for...

Modified postannealing of the Ge condensation process for better-strained Si material and devices

Liu, Xuyan, Ma, Xiaobo, Du, Xiaofeng, Liu, Weili, Song, Zhitang, Lin, Chenglu
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Volume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3491186
File:
PDF, 1.06 MB
english, 2010
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