Influence of temperature on the formation by reactive CVD...

Physica B: Condensed Matter 1993 Vol. 185; Iss. 1-4

Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon

N. Bécourt, J.L. Ponthenier, A.M. Papon, C. Jaussaud
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Volume:
185
Year:
1993
Language:
english
Pages:
6
DOI:
10.1016/0921-4526(93)90217-t
File:
PDF, 1.21 MB
english, 1993
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